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Ramesh G. Mani

Professor    Physics & Astronomy
Education

University of Maryland, College Park - B.S., M.S., Ph.D.

Biography

Ramesh Mani obtained his higher education at the University of Maryland, College Park. After the work at the University of Maryland, he was employed as a scientist at the Max-Planck-Institute for Solid State Physics in Stuttgart, Germany, at the University of California, Santa Barbara, and Harvard University.

Ramesh Mani is specialized in experimental condensed matter physics, in the study of electronic properties of low dimensional systems. His previous works include: (a) the report that giant magnetoresistance in high mobility 2D electron systems depend on the size of the device and that such giant magnetoresistance can potentially lead to new equilibrium zero-resistance states without Hall resistance quantization in 2D electronic systems, [R. G. Mani, A. Kriisa, and W. Wegscheider, “Size-dependent giant-magnetoresistance in millimeter scale GaAs/AlGaAs 2D electron devices,” Scientific Reports 3, 2747 (2013) | doi:10.1038/srep02747]. (b) the demonstration that, under microwave and terahertz excitation, a high mobility 2D electron system can exhibit strong magnetoresistance oscillations with unexpected radiation-induced zero-resistance states at the oscillatory minima, without concurrent Hall resistance quantization, [R. G. Mani, J. H. Smet, K. von Klitzing, V. Narayanamurti, W. B. Johnson, and V. Umansky, “Zero-resistance states induced by electromagnetic-wave excitation in GaAs/AlGaAs heterostructures,” Nature 420, 646 (2002)]. (c) the observation that  fractional quantum Hall effects constitute a fractal,[R. G. Mani and K. von Klitzing, “Fractional quantum Hall effects as an example of fractal geometry in nature,” Z. Phys. B 100, 635 (1996)] and (d) the invention of the “anti-Hall bar within a Hall bar” geometry and the demonstration of dual simultaneous Hall effects in a single specimen both in the millitesla regime at room temperature, and in the low temperature, high magnetic field integral- and fractional- quantum Hall effect limits [“Hall effect device with current and Hall-voltage contacts,” R. G. Mani et al., PCT registration EP 94/00701; European Patent (France, UK, and Germany) EP0689723; U.S.A. Patent #5,646,527; Japanese Patent Registration HEI-6-519,590; Korean Patent Registration 703,831/95; R. G. Mani, “Dual ordinary, integral quantum, and fractional quantum Hall effects in partially gated doubly connected GaAs/AlGaAs heterostructure devices,” Phys. Rev. B 55, 15838 (1998)].

 

Employment History:

Max-Planck-Institut FkF, Stuttgart, Germany

University of California, Santa Barbara

Harvard University

Collaborators:

Werner Wegscheider, ETH-Zurich

Claire Berger and Walt de Heer, Georgia Institute of Technology